Deposition,opto-electronic and structural characterization of polymorphous silicon thin films to be applied in a solar cell structure |
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| Affiliation: | 1. Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México. A.P. 70-360, Coyoacán, C.P. 04510 México, D.F., Mexico;2. Grupo de Investigación en Desarrollo Tecnológico, Mecatrónica y Agroindustria (GIDETECHMA), Facultad de Ingeniería Mecánica, Universidad Pontificia Bolivariana de Bucaramanga. Km. 7 via a Piedecuesta, Floridablanca, Colombia;3. Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Instituto Politécnico Nacional, Av. I.P.N. 2580, Gustavo A. Madero, 07340 México, D.F., Mexico;4. Department of Physics and Astronomy, University of Texas at San Antonio, One UTSA Circle, San Antonio, TX 78249, USA;5. Departamento de Física, Universidad Autónoma Metropolitana, AP 55-534, CP 09340 México, D.F., Mexico;6. Departamento de Física, Centro de Investigación y Estudios Avanzados del IPN, CP 07360, México, D.F., Mexico;1. Ostim Vocational School, Gazi University, 06500 Ankara, Turkey;2. Department of Physics, Faculty of Sciences, Ataturk University,25240 Erzurum, Turkey;3. Department of Physics Engineering, Faculty of Sciences, Istanbul Medeniyet University,34700 Istanbul, Turkey;1. Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, blvd. Tzarigradsko chaussee 72, Sofia, Bulgaria;2. Institute of Electronics, Bulgarian Academy of Sciences, blvd. Tzarigradsko chaussee 72, Sofia, Bulgaria;1. Technical Inspection Engineering Department, Petroleum University of Technology, Abadan, Iran;2. Health, Safety and Environment (HSE) Engineering Office, NIOPDC, Yazd Region, Yazd 89167-84395, Iran;3. Department of Materials Engineering, Malek Ashtar University of Technology, ShahinShahr, Isfahan, Iran;4. Adjunct Professor, COMSATS University, Lahore, Pakistan;5. Prof Emeritus, KFUPM, Dhahran, Saudi Arabia;1. Nanomaterials Research Laboratory (NRL), Department of Applied Sciences, Chitkara University, Rajpura 140401, Punjab, India;2. Punjab Technical University (PTU), Jalandhar 144601, India;3. Department of Physics, Panjab University, Chandigarh 160014, India;4. Department of Physics, G.G.D.S.D. College, Sector-32 C, Chandigarh 160030, India;1. New Technologies – Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen, Czech Republic;2. Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis, Malaysia |
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| Abstract: | In this study we analyze the optoelectronic properties and structural characterization of hydrogenated polymorphous silicon thin films as a function of the deposition parameters. The films were grown by plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of argon (Ar), hydrogen (H2) and dichlorosilane (SiH2Cl2). High-resolution transmission electron microscopy images and Raman measurements confirmed the existence of very different internal structures (crystalline fractions from 12% to 54%) depending on the growth parameters. Variations of as much as one order of magnitude were observed in both the photoconductivity and effective absorption coefficient between the samples deposited with different dichlorosilane/hydrogen flow rate ratios. The optical and transport properties of these films depend strongly on their structural characteristics, in particular the average size and densities of silicon nanocrystals embedded in the amorphous silicon matrix. From these results we propose an intrinsic polymorphous silicon bandgap grading thin film to be applied in a p–i–n junction solar cell structure. The different parts of the solar cell structure were proposed based on the experimental optoelectronic properties of the pm-Si:H thin films studied in this work. |
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| Keywords: | Solar cells PECVD Polymorphous silicon Thin films |
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