Electrical and optical properties of ZnO/Si heterojunctions as a function of the Mg dopant content |
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| Affiliation: | 1. School of Materials & Mineral Resources Engineering, Universiti Sains Malaysia, Malaysia.;2. Faculty of Technology of São Paulo, São Paulo, Brazil;1. School of Science, Jiangnan University, Wuxi 214122, China;2. China Electronics Technology Group Corporation No. 38 Research Institute, Hefei 230088, China;3. Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;1. Department of Physics & I3N, University of Aveiro, 3810-193 Aveiro, Portugal;2. Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’énergie, BP95, Hammam-Lif 2050, Tunisia;3. Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay, 91 460 Marcoussis, France;2. Department of Physics, Arab-American University, Jenin, Palestine;3. Group of Physics, Faculty of Engineering, Atilim University, 06836 Ankara, Turkey;1. Department of Electrical Engineering, Incheon National University, Incheon 406772, Republic of Korea;2. Applied Device and Material Lab., Device Technology Division, Korea Advanced Nanofab Center (KANC), Suwon 443270, Republic of Korea |
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| Abstract: | Undoped and Mg-doped ZnO thin films prepared by a sol–gel process were deposited on p-Si and glass substrates via spin coating. The electrical and optical properties of the films were investigated. Atomic force microscopy images revealed that the ZnO films are formed from fibers consisting of nanoparticles. The electrical conductivity mechanism of the films was investigated. The I–V characteristics of Al/ZnO/p-Si samples showed rectification behavior with a rectification ratio that depended on the applied voltage and the Mg doping ratio. ZnO/p-Si heterojunction diodes exhibited non-ideal behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer, interface states, and series resistance. The barrier height for undoped and Mg-doped ZnO/p-Si diodes was in the range 0.78–0.84 eV. The results demonstrate that the electrical properties of ZnO/p-Si heterojunction diodes are controlled by the Mg dopant content and suggest that the optical bandgap of these ZnO films can be tuned using the Mg level. |
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| Keywords: | Thin films Band structure Electrical properties Sol–gel growth |
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