表面覆盖氮化硼膜的金刚石膜的场发射特性

利用热丝化学气相沉积（HFCVD）方法在Si衬底上生长了4μm厚的金刚石膜，然后利用射频磁控溅射方法在金刚石膜上沉积了100nm厚的六角氮化硼（h—BN）薄膜．在超高真空系统中测试了覆盖氮化硼（BN）薄膜前后金刚石膜的场发射特性，结果表明覆盖BN薄膜后的金刚石膜的场发射特性明显提高，开启电场由14V／μm升到8V／μm．F—N曲线表明，覆盖BN薄膜后的金刚石膜在强电场区域的场增强因子有所降低，这可能归因于场发射点随着电场的增强而改变．

Field Emission Characteristics from BN-coated Diamond Films

4μm diamond films were deposited on Si by hot filament chemical vapor deposition（HFCVD）, then a 100 nm hexangular boron nitride（h-BN） thin films were prepared on diamond films by RF magnetron sputtering physical vapor deposition. The field emission characteristics of diamond films were tested in an ultrahigh vacuum system（〈10^-7 Pa）. The field emission characteristics of the diamond films coated with the h-BN thin films were improved clearly, and the threshold field decreased from 14 V/μm to 8 V/μm, The Fowler-Nordheim （F-N） plots showed that the field enhancement factor decreased in the high electric field region, it could be attributed to the change of field emission sites.