|
|||||
|
|
| LED芯片钝化研究进展 | |
| 引用本文： | 李虹,张萌. LED芯片钝化研究进展[J]. 材料导报, 2010, 24(7) |
| 作者姓名： | 李虹 张萌 |
| 作者单位： | 南昌大学教育部发光材料与器件工程研究中心,南昌,330031;南昌大学教育部发光材料与器件工程研究中心,南昌,330031 |
| 基金项目： | 教育部长江学者与创新团队发展计划资助项目 |
| 摘 要： | 综述了国内外在LED钝化材料、钝化工艺和钝化处理时LED性能的影响等方面的一些主要研究进展,指出了以蓝宝石为衬底CaN基LED钝化材料存在的问题和研究方向,特别强调以Si为衬底的LED钝化膜的研究趋势.现阶段的钝化材料主要有SiN_x、SiO_2、SiON_x等,常用的钝化方法有等离子体增强化学气相沉积(PECVD)、磁控溅射和电子束蒸发等.对LED芯片的钝化处理可以降低LED器件的漏电流和提高其光输出功率,然而,这也会导致LED的P区载流子数量的下降和芯片表面应力的增加. |
| 关 键 词： | LED 钝化 漏电流 光输出功率 应力 |
Progress in Research on the Passivation of LED Chips |
|
| Abstract: | This research concentrates on LED passivation materials,passivation process and the influence of the passivation to LED properties. At present,the popular passivation materials contain SiN_x,SiO_2 and SiON_x. And the prevalent passivation methods are plasma enhanced chemical vapor deposition, sputtering, electron beam evaporation and so on. The passivation of LED chips can reduce the leakage current and increase its optical output power. However, this will reduce the number of LED carriers in the P-zone and increase the stress in the surface of LED chips. |
| Keywords: | LED LED passivation leakage current optical output power stress |
| 本文献已被 万方数据 等数据库收录！ | |