Silicon-On-Nothing Electrostatically Doped Junctionless Tunnel Field Effect Transistor (SON-ED-JLTFET): A Short Channel Effect Resilient Design |
| |
Authors: | Kaity Aishwarya Singh Sangeeta Kondekar P N |
| |
Affiliation: | 1.Microelectronics and VLSI Design, National Institute of Technology Patna, Bihar, India ;2.Nanoelectronics and VLSI Laboratory, Indian Institute of Information Technology, Design and Manufacturing (IIITDM), Jabalpur, India ; |
| |
Abstract: | Silicon - This work investigates the novel device structure, silicon-on-nothing electrostatically doped junctionless tunnel field effect transistor (SON-ED-JLTFET) with high-K stacked hetero-gate... |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|