Influence of gate intervals on the behaviour of submicron dual-gate FETs |
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| Authors: | Allamando E. Salmer G. Bouhess M. Constant E. |
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| Affiliation: | Université des Sciences et Techniques de Lille I, Centre Hyperfréquences et Semiconducteurs, Laboratoire associé au CNRS 287, Villeneuve d'Ascq, France; |
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| Abstract: | A simple, self-consistent model, taking into account the non-stationary electron dynamic effects, is used to study the behaviour of submicron dual-gate FETs. It shows that the conventional model, based on the connection of two field-effect transistors in cascade, is no longer valid when the intergate distances become smaller than 0.6 ?m. |
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