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H-POSS表面润湿性的分子动力学模拟
引用本文:周伟,王嘉骏,顾雪萍,冯连芳.H-POSS表面润湿性的分子动力学模拟[J].计算机与应用化学,2011,28(6).
作者姓名:周伟  王嘉骏  顾雪萍  冯连芳
作者单位:浙江大学化学工程与生物工程学系,化学工程联合国家重点实验室,浙江,杭州,310027
基金项目:化学工程联合国家重点实验室开放课题资助(SKL-ChE-11D01)
摘    要:采用分子动力学模拟方法研究了水滴在多面体低聚倍半硅氧烷(H-POSS)固体表面的润湿性能,H-POSS分子和水分子分别采用COMPASS力场和SPC力场模型。模拟得到H-POSS基体密度为1.84g/cm~3,且X射线衍射模拟发现基体具有明显衍射峰,表现出晶体特性,说明COMPASS力场适用于H-POSS基体的构建与研究。H-POSS表面水接触角的模拟值为104.9°,具有疏水性能。通过直接水解法由三氯硅烷(HSiCl_3)实验合成出H-POSS样品,傅立叶红外表征(FT-IR)发现,在2260、1142和871cm~(-1)波数位置出现吸收峰,证实了所合成的样品为H-POSS。其表面水接触角的实验值为109.3°,与模拟值的相对误差仅为4%,说明分子动力学方法可应用于计算H-POSS材料表面润湿性。模拟结果还表明体系温度影响H-POSS材料的表面润湿性,增大体系温度,表面疏水性能降低。

关 键 词:润湿性能  H-POSS  接触角  分子动力学模拟  

Molecular dynamics simulation of the wettability on polyhedral oligomeric silsesquiones(H-POSS)
Zhou Wei,Wang Jiajun,Gu Xueping,Feng Lianfang.Molecular dynamics simulation of the wettability on polyhedral oligomeric silsesquiones(H-POSS)[J].Computers and Applied Chemistry,2011,28(6).
Authors:Zhou Wei  Wang Jiajun  Gu Xueping  Feng Lianfang
Affiliation:Zhou Wei,Wang Jiajun~*,Gu Xueping and Feng Lianfang (State Key Laboratory of Chemical Engineering,Department of Chemical and Biological Engineering,Zhejiang University,Hangzhou,310027,Zhejiang,China)
Abstract:Wetting behavior of water on the surface of polyhedral oligomeric silsesquiones(H-POSS)was investigated by molecular dynamics simulation.Force fields of COMPASS and SPC were applied for H-POSS and water,respectively.It is found that simulated density of H-POSS substrate is 1.84 g/cm~3,and apparent diffraction peaks come out,which indicate that the substrate is crystallizable to some extent.It suggests that COMPASS force field is adaptable to the construction and investigation of H-POSS.The surface of H-POSS...
Keywords:Wettability  H-POSS  Contact angle  Molecular dynamics simulation  
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