Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout |
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| Authors: | N. Berbel R. Fernández-García I. Gil B. Li A. Boyer S. BenDhia |
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| Affiliation: | 1. Electronic Engineering Department, UPC Barcelona Tech., Colom 1, 08222 Terrassa, Spain;2. Départment du Genie Electrique et Informatique, INSA de Toulouse, Avenue de Rangueil 135, 31077 Toulouse, France;1. Dept. of Electrical and Computer Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran;2. Dept. of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, Iran;1. College of Mechanical Engineering, Hebei Provincial Key Laboratory of Inorganic Nonmetallic Materials, Hebei United University, 46 Xinhua West Street, Tangshan, Hebei 063009, China;2. Department of Mechanical Engineering-Engineering Mechanics, Multi-Scale Technologies Institute, Michigan Technological University, Houghton, MI 49931, USA |
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| Abstract: | In this paper the usefulness of the nth power law MOSFET model under Hot Carrier Injection (HCI) wearout has been experimentally demonstrated. In order to do that, three types of nFET transistors have been analyzed under different HCI conditions and the nth power law MOSFET model has been extracted for each sample. The results show that the model can reproduce the MOSFET behavior under HCI wearout mechanism. Therefore, the impact of HCI on circuits can be analyzed by using the nth power law MOSFET model. |
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