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Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses
Authors:GA Koné  B Grandchamp  C Hainaut  F Marc  C Maneux  N Labat  T Zimmer  V Nodjiadjim  M Riet  J Godin
Affiliation:1. IMS, CNRS UMR 5818, Université Bordeaux 1-351, Cours de la Libération, F-33405 Talence, France;2. III-V Lab, Joint Lab: Bell Labs, Thales Research and Technology and CEA-LETI, Route de Nozay, F-91461 Marcoussis Cedex, France;1. Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University, Kunming 650500, China;2. Institute of Materials Science and Engineering, Ocean University of China, Qingdao 266100, China;1. Chair for Electron Devices and Integrated Circuits, TU Dresden, 01062 Dresden, Germany;2. Dept. of Electrical and Computer Engineering, UC San Diego, La Jolla, CA, USA;1. School of Information Science and Technology, Key Laboratory of Polar Materials and Devices, East China Normal University, Shanghai, 200241, China;2. Tsinghua National Laboratory for Information and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China;1. Laboratoire Matériaux, Molécules et Applications, Institut Préparatoire aux Études Scientifiques et Techniques, Université de Carthage, BP 51, 2070 La Marsa, Tunis, Tunisia;2. Sorbonne Universités, UPMC Université Paris 06, UMR 7588, Institut des NanoSciences de Paris, F-75005 Paris, France;3. CNRS, UMR 7588, INSP, F-75005 Paris, France;4. Laboratoire de Photonique et Nanostructures, CNRS, UPR 20, Route de Nozay, F-91460 Marcoussis, France
Abstract:We report on the reliability of InGaAs/InP DHBT technology which has applications in very high-speed ICs (over 100 Gbits/s). This work presents the results of accelerated aging tests under thermal and electrical stresses performed on HBT up to 2000 h. Stress conditions consist in applying collector–emitter bias VCE from 1.3 to 2.7 V and collector current densities JC of 400 and 610 kA/cm2. The corresponding junction temperatures TJ extends from 83 to 137 °C. The base current ideality factor ηB increase and the current gain β decrease have revealed a degradation of the base–emitter junction. The normalized current gain βnorm drop has occurred earlier for higher VCE and/or higher TJ. A 20% decrease of βnorm chosen as the failure criterion leads to an activation energy of 1.1 eV.
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