In2O3基纳米材料气敏性能研究综述

In2O3半导体纳米材料由于具有较高的响应灵敏度、较快的响应-恢复时间,是气敏领域的明星材料,得到了广大研究者的青睐。然而,In2O3气敏材料由于化学组份单一往往催化能力有限,气敏性能不太理想(灵敏度较低、相应的恢复时间较长、功耗较高),严重限制了其在日常生产生活中的应用。实验证明:对单一的气敏材料修饰改性可以有效提升材料的气敏性能。国内外广大研究者相继对In2O3进行了大量的研究工作并取得了显著的成果。综述了In2O3气体传感器最新的研究进展,对近几年In2O3半导体纳米材料发展存在的问题及改性方法进行概括,并对以后的发展进行了展望。

Review on the In2O3-based Nanomaterials Sensing Performance

In2O3 is one of the most promising sensing materials,which has appealed many researchers′ interest due to high response and fast response-recovery time.However,In2O3 usually can′t get an ideal performance due to the single component and limited catalytic capacity,thus lead to the materials with low sensitivity,long response-recovery time and high working temperature,which severely restricted the application.Many researchers have modified the surface of the materials and the results confirmed that this was an effective way to improve the sensing performance.Thus,we have summarized the latest research progress of In2O3,included the problems and effective measures of the In2O3 nanomaterial in gas sensor.Finally we have proposed the future development of the In2O3 nanomaterial.