| 基于磨损行为的单晶硅片化学机械抛光材料的去除特性 |
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| 引用本文： | 苏建修,高虹,陈锡渠,宁欣,郭东明. 基于磨损行为的单晶硅片化学机械抛光材料的去除特性[J]. 纳米技术与精密工程, 2009, 7(3): 265-269 |
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| 作者姓名： | 苏建修 高虹 陈锡渠 宁欣 郭东明 |
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| 作者单位： | 河南科技学院机电学院,新乡,453003;贵州大学职业技术学院,贵阳,550025;大连理工大学精密与特种加工教育部重点实验室,大连,116024 |
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| 基金项目： | 国家自然科学基金重大项目,河南科技学院高学历人才启动基金,河南省教育厅自然科学研究计划项目 |
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| 摘 要： | 为了掌握化学机械抛光（CMP）过程中硅片表面材料的去除行为,根据CMP过程中硅片表面材料的磨损行为,建立了硅片CMP时的材料去除率构成成分模型,设计了不同成分的抛光液并进行了材料去除率实验,得出了机械、化学及其交互作用所引起的材料去除率.结果显示,机械与化学的交互作用率为85.7%～99.1%.磨粒的机械作用率为69.5%～94.0%,磨粒的机械与化学交互作用率为55.1%～93.1%.由此可见,磨粒的机械作用是化学机械抛光中的主要机械作用,磨粒与抛光液的机械化学交互作用引起的材料去除率是主要的材料去除率.研究结果可为进一步研究硅片CMP时的材料去除机理提供理论参考依据.
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| 关 键 词： | 化学机械抛光 材料去除机理 材料去除率 磨损行为 |
Characteristic of Material Removal in Chemical Mechanical Polishing of Silicon Wafer Based on Abrasion Behavior |
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| SU Jian-xiu,GAO Hong,CHEN Xi-qu,NING Xin,GUO Dong-ming. Characteristic of Material Removal in Chemical Mechanical Polishing of Silicon Wafer Based on Abrasion Behavior[J]. Nanotechnology and Precision Engineering, 2009, 7(3): 265-269 |
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| Authors: | SU Jian-xiu GAO Hong CHEN Xi-qu NING Xin GUO Dong-ming |
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| Affiliation: | 1.School of Machinery and Electricity;Henan Institute of Science and Technology;Xinxiang 453003;China;2.College of Vocational Education;Guizhou University;Guiyang 550025;3.Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education;Dalian University of Technology;Dalian 116024;China |
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| Abstract: | In order to understand the behavior of material removal in the process of chemical mechanical polishing(CMP),the model of forming element of material removal rate(MRR) has been built based on friction and abrasion behaviors in wafer CMP process.Different CMP slurries were designed for CMP test of MRR.According to the test results,the MRR produced by mechanical action,chemical action and interaction between the mechanical action and the chemical action,respectively,has been obtained.The test results show tha... |
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| Keywords: | chemical mechanical polishing material removal mechanism material removal rate abrasion behavior |
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