Base resistance scaling for SiGeC HBTs with a fully nickel-silicided extrinsic base |
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| Authors: | Malm B.G. Haralson E. Suvar E. Radamson H.H. Yong-Bin Wang Mikael Ostling |
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| Affiliation: | Dept. of Microelectron. & Inf. Technol., KTHR. Inst. of Technol., Kista, Sweden; |
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| Abstract: | A novel SiGeC HBT process with a quasi-self-aligned emitter-base architecture and a fully nickel-silicided extrinsic base region has been developed. A very low total base resistance R/sub B/ was achieved along with simultaneous NiSi formation on the polycrystalline emitter and collector regions. Uniform silicide formation was obtained across the wafer, and the resistivity of the Ni(SiGe:C) silicide layer was 24 /spl mu//spl Omega//spl middot/cm. About 50-100 nm of lateral growth of silicide underneath the emitter pedestal was observed. DC and HF results with balanced f/sub T//f/sub MAX/ values of 41/42 GHz were demonstrated for 0.5/spl times/10/spl mu/m/sup 2/ transistors. |
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