Microwave Dielectric Properties and Thermally Stimulated Depolarization Currents of MgF2‐Doped Diopside Ceramics

A new low‐fired dielectric material derived from CaMg_0.9Zn_0.1Si₂O₆ (CMZS) ceramics with high quality factor was synthesized by solid‐state reaction method. The effects of MgF₂ addition on the sinterability, phase composition, crystal defects, and microwave dielectric properties of CMZS were investigated. MgF₂ was proved not only to lower the sintering temperature to ~1000°C but also to remarkably modify the microwave dielectric properties of CMZS. In addition to the main diopside phase, forsterite was identified as the secondary phase in all MgF₂‐doped samples. Dielectric temperature spectra showed that MgF₂ induced significant dielectric relaxations associated with oxygen vacancy defects to CMZS. Thermally stimulated depolarization current was, therefore, considered to obtain the defects associated with extrinsic microwave dielectric loss mechanisms. Compared with undoped CMZS, although the concentration of oxygen vacancies showed a notable increase in the 5 wt% MgF₂‐doped CMZS, the Q×f values were still improved. Here, with proper MgF₂‐doping, it demonstrated that the microwave dielectric loss was basically influenced by phase composition. The excellent characteristics of ε_r = 7.78, Q×f = 151 800 GHz, and τ_f = ?26.40 ppm/°C were achieved from the 5 wt% MgF₂‐doped specimens sintered at 1000°C.