Post-CMOS-Compatible Aluminum Nitride Resonant MEMS Accelerometers

This paper describes the development of aluminum nitride (AlN) resonant accelerometers that can be integrated directly over foundry CMOS circuitry. Acceleration is measured by a change in resonant frequency of AlN double-ended tuning-fork (DETF) resonators. The DETF resonators and an attached proof mass are composed of a 1- $muhbox{m}$ -thick piezoelectric AlN layer. Utilizing piezoelectric coupling for the resonator drive and sense, DETFs at 890 kHz have been realized with quality factors $(Q)$ of 5090 and a maximum power handling of 1 $muhbox{W}$. The linear drive of the piezoelectric coupling reduces upconversion of $1/f$ amplifier noise into $1/f^{3}$ phase noise close to the oscillator carrier. This results in lower oscillator phase noise, $-$96 dBc/Hz at 100-Hz offset from the carrier, and improved sensor resolution when the DETF resonators are oscillated by the readout electronics. Attached to a 110-ng proof mass, the accelerometer microsystem has a measured sensitivity of 3.4 Hz/G and a resolution of 0.9 $hbox{mG}/surdhbox{Hz}$ from 10 to 200 Hz, where the accelerometer bandwidth is limited by the measurement setup. Theoretical calculations predict an upper limit on the accelerometer bandwidth of 1.4 kHz.$hfill$ 2008-0190]