等离子硅刻蚀及其工艺参数的多尺度优化

用CFD-ACE+和CFD-TOPO分别对容性耦合等离子体反应腔室放电和等离子硅刻蚀过程进行仿真,讨论不同射频电压和腔室条件对等离子体特性的影响.结果表明:随着射频电压的升高,离子的通量增大;在低射频电压时,离子通量随腔室压强的升高而减小,而在高射频电压时趋势则相反.用Kriging模型对影响刻蚀形貌的参数(腔室压强和射频电压)进行优化,结果表明该优化方法可以为工艺条件相近的刻蚀机设备的设计提供参考.

Plasma silicon etch and multi-scale optimization on process parameters

The discharge process in capacitively coupled plasma reaction chamber and the plasma silicon etch process are simulated by CFD ACE+ and CFD TOPO. The effect of different radio frequency voltage and chamber conditions on plasma characteristics are discussed. The results show that, with the increase of radio frequency voltage, the flux of ion increases; the flux of ion decreases with the increase of chamber pressure when the radio frequency voltage is low, but the change trend shows in opposite direction while the radio frequency voltage is high. The Kriging model is used to optimize the parameters such as chamber pressure and ration frequency voltage, which have influences on the etching profile. The result shows that the optimization method is feasible, which can provide reference for the design of the etch device in similar process condition.