SiC器件单粒子效应敏感性分析

新一代航天器需要使用耐高压、功率损耗低的第3代半导体SiC器件，为了给器件选用和抗辐射设计提供依据，以SiC MOSFET和SiC二极管为对象，进行单粒子效应敏感性分析。重离子试验发现，在较低电压下，重离子会在SiC器件内部产生永久损伤，引起漏电流增加，甚至单粒子烧毁。SiC MOSFET和SiC二极管试验结果类似。试验结果表明SiC器件抗单粒子能力弱，与器件类型关系不大，与SiC材料有关。为了满足空间应用需求，有必要进一步开展SiC器件辐射效应机理、试验方法和器件加固技术等研究。

Single Event Effect Sensitivity Analysis of SiC Device

The third generation semiconductor SiC devices with the advantages of high operating voltage and low power dissipation are ideal candidates for new generation spacecraft. To provide the basis data for SiC device selection and radiation hardness assurance for spacecraft, the sensitivity of single event effect (SEE) on SiC devices was analyzed. Heavy ion experiments were carried out with SiC MOSFET and SiC diodes. Permanent damage in SiC devices biased at lower voltages was caused by heavy ions, resulting in increasing of leakage current and/or single event burnout (SEB). The similar results were observed for both SiC MOSFET and SiC diodes. The experiment result shows that the SiC device is sensitive to SEE, which is independent of the type of devices and relates to SiC material. More studies on radiation effect mechanism, experiment method and device radiation hardness technology for SiC are needed for space applications.