| 一种高精度低温漂带隙基准电路的设计与实现 |
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| 引用本文： | 刘晓轩,张玉明,季轻舟,曹天骄.一种高精度低温漂带隙基准电路的设计与实现[J].西安电子科技大学学报,2019,46(2):41-46. |
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| 作者姓名： | 刘晓轩 张玉明 季轻舟 曹天骄 |
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| 作者单位： | 1. 西安电子科技大学 宽禁带半导体技术国防重点学科实验室, 陕西 西安 7100712. 西安微电子技术研究所,陕西 西安 710065 |
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| 摘 要： | 针对带隙基准电路对集成电路精度的影响,提出了一种新的低温漂带隙基准电路。通过分段温度补偿,补偿了带隙基准电路,减小了温度漂移,优化了基准的温度性能。基于西岳公司3μm18V双极工艺,设计了基准电路和版图,并进行流片。仿真和流片结果表明:在典型工艺角下,基准在-55℃~125℃内,温度系数为1.7×10 -6~6.0×10 -6/℃;在2.2V的电源幅度范围下,具有0.03 mV/V的电源抑制特性。该电路已成功应用于一款线性稳压电源中。
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| 关 键 词： | 带隙基准 分段温度补偿 高阶温度特性 |
| 收稿时间： | 2018-10-17 |
Design and realization of a high-precision and low temperature drift reference circuit |
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| LIU Xiaoxuan,ZHANG Yuming,JI Qingzhou,CAO Tianjiao.Design and realization of a high-precision and low temperature drift reference circuit[J].Journal of Xidian University,2019,46(2):41-46. |
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| Authors: | LIU Xiaoxuan ZHANG Yuming JI Qingzhou CAO Tianjiao |
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| Affiliation: | 1. The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian Univ., Xi’an 710071, China;2. Xi’an Microelectronic Technology Institute,Xi’an 710065, China |
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| Abstract: | A novel bandgap reference circuit with a low temperature coefficient is presented, which compensates the voltage slightly and optimizes the temperature characteristic by setting up a subsection compensation circuit. The circuit and its layout have been done by the 3μm 18V Bipolar process in the No.771 Institute. Simulation and fabrication results show that the temperature coefficient of the voltage reference is 1.7×10 -6~6.0×10 -6/℃ at -55℃~125℃ under the condition of the 2.2V wide input voltage range, and that the circuit possesses the power supply rejected characteristic of 0.03 mV/V. This circuit and its layout have been successfully applied to a low-dropout regulator. |
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| Keywords: | bandgap reference subsection temperature compensation high-order temperature characteristic |
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