Plasma nitridation of thin SiO2 films: AES, ELS and IR study |
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| Authors: | E.D. Atanassova L.I. Popova |
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| Affiliation: | Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko chaussee 72, 1784, Sofia, Bulgaria |
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| Abstract: | Auger electron spectroscopy, low-energy electron loss spectroscopy and infrared spectroscopy are used to investigate the nitridation of thin (10–22 nm) thermal SiO2 in RF soft NH3 plasma. It is found that plasma action at a substrate temperature of 573 K can completely nitridate the thermal oxide to an oxynitride layer. The layers obtained are macroscopic mixtures of two phases SiO2 and Si3N4, rather than amorphous polymers of Si, O and N. |
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