| AlGaN/GaN异质结辐射感生界面态电荷对二维电子气输运的影响 |
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| 引用本文： | 范隆,李培咸,郝跃.AlGaN/GaN异质结辐射感生界面态电荷对二维电子气输运的影响[J].半导体学报,2003,24(9):937-941. |
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| 作者姓名： | 范隆 李培咸 郝跃 |
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| 作者单位： | [1]西安电子科技大学微电子所，西安710071;中国科学院新疆理化技术研究所，乌鲁木齐830011 [2]西安电子科技大学微电子所，西安710071 |
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| 基金项目： | 国防预研基金;41308060106; |
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| 摘 要： | 根据荷电中心与自由载流子间的库仑散射作用,给出了异质结辐射感生界面态电荷对二维电子气(2DEG)迁移率的散射模型.计算了在不同沟道电子面密度下,界面态电荷密度与其所限制的迁移率之间的关系.运用马德森定则分析了辐射感生界面态电荷散射对总迁移率的影响.分析表明,辐射感生界面态电荷在累积到一定量后,会显著影响迁移率,一定程度上提高2DEG密度能抑制界面态电荷散射的作用
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| 关 键 词： | AlGaN/GaN异质结 辐射 界面态电荷 二维电子气 迁移率 |
| 文章编号： | 0253-4177(2003)09-0937-05 |
| 修稿时间： | 2002年11月6日 |
Effect of Irradiation Induced Heterointerface State Charges on 2DEG Transport Property in AlGaN/GaN Heterostructures |
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| Fan Long ,Zhang Jincheng ,Li Peixian and Hao Yue.Effect of Irradiation Induced Heterointerface State Charges on 2DEG Transport Property in AlGaN/GaN Heterostructures[J].Chinese Journal of Semiconductors,2003,24(9):937-941. |
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| Authors: | Fan Long Zhang Jincheng Li Peixian and Hao Yue |
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| Affiliation: | Fan Long 1,2,Zhang Jincheng 1,Li Peixian 1 and Hao Yue 1 |
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| Abstract: | Based on the Coulomb scattering principle between charged centers and free carriers,a mobility model limited by scattering of irradiation induced heterointerface state charges in AlGaN/GaN heterostructure is presented.The dependences of the mobility component from heterointerface state charges scattering on its charge density are calculated with various two-dimensional electron gas densities (N s) .The influence of irradiation induced heterointerface state charges scattering on total initial mobility is analyzed by means of Matthiessen's rule.The calculated results show that irradiation induced heterointerface state charges,after reaching a critical value,can evidently degrade total mobility,and a certain extent increaseing 2DEG sheet density (N s) can restrain the scattering effect of heterointerface state charge. |
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| Keywords: | AlGaN/GaN heterostructure irradiation heterointerface state charge 2DEG mobility |
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