Energy distribution of localized states in amorphous hydrogenated silicon |
| |
| Authors: | K. V. Kougiya E. I. Terukov I. N. Trapeznikova |
| |
| Affiliation: | (1) St. Petersburg State Pediatric Academy, St. Petersburg, 194100, Russia;(2) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
| |
| Abstract: | A new method for determining the spectral dependence of the optical-absorption coefficient in amorphous hydrogenated silicon is suggested. The method is based on the analysis of spectral and temperature dependences of transient photoconductivity in this material. Energy distribution of localized states involved in recombination of nonequilibrium holes was calculated. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
