硫化锌／多孔硅复合体系光致发光特性的研究

为了研究硫化锌／多孔硅复合体系的光致发光特性，通过电化学阳极氧化法制备了多孔硅样品，然后用脉冲激光沉积的方法在其上沉积硫化锌薄膜，测量了硫化锌／多孔硅复合体系的光致发光谱，并对其进行了详细的理论分析和实验验证。结果表明，在不同的激发波长(340nm，360nm，390nm)下，硫化锌／多孔硅复合体系的光致发光谱不同，硫化锌和多孔硅发光的相对(蓝／红)积分强度比值也不同；硫化锌薄膜的生长温度不同(100℃，250℃，350℃)时，硫化锌／多孔硅复合体系的发光不同，随着生长温度的升高，复合体系的发光谱中，硫化锌的发光增强而多孔硅的发光减弱；衬底多孔硅的制备电流密度不同(3mA／cm²，9mA／cm²，11mA／cm²)时，硫化锌／多孔硅复合体系的发光也有着不同的特点。在适当的多孔硅制备电流密度条件下，把硫化锌的发光与多孔硅的发光叠加，得到了可见光区较宽的光致发光谱带(450nm～700nm)，呈现较强的白光发射，这一结果为白光二极管的实现开辟了一条新的捷径。

Study on photoluminescence characteristic of zinc sulfide/porous Si composites

In order to study the photoluminescence property of zinc sulfide/porous Si composites,porous Si samples were prepared by electrochemical anodization,and zinc sulfide films were deposited on porous Si substrates by pulsed laser deposition.The photoluminescence spectra were measured. The results showed that,under different excitation wavelengths(340nm,360nm,390nm),the photoluminescence spectra of zinc sulfide/porous Si composites were different,and the relative(blue/red)integrated intensities were also different;When zinc sulfide films were grown at different temperatures(100℃,250℃,350℃),zinc sulfide/porous Si composites also presented different photoluminescence property,with the increase of growth temperature,the luminescence intensity of zinc sulfide increased but the luminescence intensity of porous Si decreased;When porous Si substrates were prepared at different current densities(3mA/cm2,9mA/cm2,11 mA/cm2),the optical property of zinc sulfide/porous Si composites was also different. Under proper preparing current density conditions of porous Si,the blue,green emission from zinc sulfide combining with the red emission from porous Si,a broad photoluminescence band(450nm～700nm)in the visible region was obtained,exhibiting intensively white light emission. This offers a cheap route for the realization of white light-emitting diodes.