| 适用于射频识别标签的64-kbit嵌入式阻变存储器 |
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| 引用本文： | 毕中裕,简文翔,金钢,彭巍,闫娜,闵昊.适用于射频识别标签的64-kbit嵌入式阻变存储器[J].固体电子学研究与进展,2011,31(4):398-403. |
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| 作者姓名： | 毕中裕 简文翔 金钢 彭巍 闫娜 闵昊 |
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| 作者单位： | 复旦大学专用集成电路与系统国家重点实验室,上海,201203 |
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| 基金项目： | 国家重点实验室面上项目(09MS009); 国际科技合作项目(2010DFB13040) |
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| 摘 要： | 设计并实现了一颗适用于射频识别(RFID)标签的低功耗嵌入式64-kbit阻变存储器芯片.提出了新型的带尖峰电流控制功能的高压稳压电路,在提供稳定编程电压的同时降低了芯片电源上的瞬态大电流,改善了存储器电路的可靠性；设计了适用于2T2R(2 Transistors and 2 Resistive cells)单元的敏感...
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| 关 键 词： | 阻变存储器 低功耗 射频识别标签 高压稳压环路 电容分压 |
A 64-kbit Embedded RRAM for Passive UHF RFID Transponders |
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| BI Zhongyu,JIAN Wenxiang,JIN Gang,PENG Wei,YAN Na,MIN Hao.A 64-kbit Embedded RRAM for Passive UHF RFID Transponders[J].Research & Progress of Solid State Electronics,2011,31(4):398-403. |
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| Authors: | BI Zhongyu JIAN Wenxiang JIN Gang PENG Wei YAN Na MIN Hao |
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| Affiliation: | BI Zhongyu JIAN Wenxiang JIN Gang PENG Wei YAN Na MIN Hao LIN Yinyin(State Key Laboratory of ASIC & System,Fudan University,Shanghai,201203,CHN) |
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| Abstract: | In this paper,a low power Resistive Random Access Memory(RRAM) embedded in an RFID transponder is presented for the first time.A high voltage regulator with surge current control is proposed to provide a fixed programming voltage for the programming operation and alleviate the startup surge issue as well.Also presented is a sense amplifier for 2T2R cell to achieve low power read-out.The measurement results indicate that the power consumption of the memory is 2.2 μA and 18.5 μA for a 640 kb/s read operation and a 5 kb/s write operation respectively.The whole chip is implemented in a 0.13 μm standard CMOS process while the memory IP occupies 0.39 mm2 die area. |
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| Keywords: | RRAM low power RFID transponders high voltage regulation loop capacitive divider |
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