Simultaneous determination of minority-carrier lifetime and deep doping profile using a double-sweep MOS-C technique

A double-sweepCVtechnology is introduced to determine the minority-carrier generation rates and the doping concentrations for non-uniform doping profile devices. The measurement time is typically less than 1 min. The observed minority-carrier lifetime decreased by one decade due to a boron implant. The Zerbst method leads to erroneous minority-carrier generation rate if a doping gradient exists in the deep-depletion region. Such error can be corrected by considering a doping concentration factor in the original Zerbst plot.