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| p型微氮直拉硅中氧施主的电学特性 | |
| 引用本文： | 余学功,杨德仁,马向阳,汤艳,李东升,李立本,阙端麟. p型微氮直拉硅中氧施主的电学特性[J]. 半导体学报, 2002, 23(4): 377-381. DOI: 10.3969/j.issn.1674-4926.2002.04.009 |
| 作者姓名： | 余学功 杨德仁 马向阳 汤艳 李东升 李立本 阙端麟 |
| 作者单位： | 浙江大学硅材料国家重点实验室,杭州,310027 |
| 基金项目： | 国家自然科学基金;50032010,69976025; |
| 摘 要： | 研究了p型含氮以及不含氮直拉(CZ)硅中热施主(TD)以及氮氧(N-O)复合体的电学性质.硅片在350～850℃范围进行不同时间的退火后,利用四探针和通过室温傅里叶红外光谱(FTIR)分别测量其载流子浓度和间隙氧浓度的变化.实验结果表明:p型含氮直拉硅(NCZ)中热施主的电学特性基本与n型NCZ硅相同,但N-O复合体的消除温度明显低于n型NCZ硅,这是由于p型NCZ硅中硼促进了N-O复合体的消除. |
| 关 键 词： | 直拉硅 氮氧复合体 热施主 |
| 文章编号： | 0253-4177(2002)04-0377-05 |
| 修稿时间： | 2001-07-01 |
Electrical Characteristic of Oxygen-Related Donors in p-Type Czochralski Silicon |
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| Yu Xuegong,Yang Deren,Ma Xiangyang,Tang Yan,Li Dongsheng,Li Liben and Que Duanlin. Electrical Characteristic of Oxygen-Related Donors in p-Type Czochralski Silicon[J]. Chinese Journal of Semiconductors, 2002, 23(4): 377-381. DOI: 10.3969/j.issn.1674-4926.2002.04.009 | |
| Authors: | Yu Xuegong Yang Deren Ma Xiangyang Tang Yan Li Dongsheng Li Liben Que Duanlin |
| Abstract: | The electrical behaviors of thermal donors and nitrogen- oxygen complexes in p- type CZ silicon are studied point.Af- ter the annealing of silicon in different cycles,the resistivities and the concentrations of oxygen are m easured by the four- point probe and by a Fourier transmission infrared spectrom eter(FTIR) at room temperature at wave num ber of110 7cm- 1 .It is demonstrated that the electrical characteristic of the thermal donor in p- type nitrogen- doped CZ silicon is the sam e as that in n- type nitrogen- doped CZ silicon.However,the elimination temperature of N- O complexes in p- type nitrogen- doped CZ silicon is lower than that in n- type nitrogen- doped CZ silicon.Itis suggested that boron enhances the dissociation of nitrogen- oxygen com plexes in p- type nitrogen- doped CZ silicon. |
| Keywords: | czochralski silicon nitrogen- oxygen complexes thermal donors |
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