High-temperature gallium phosphide dynistors

Elements of the technology of gallium phosphide (GaP) epitaxial multilayer heterostructures grown by chemical vapor deposition in a chloride system are described and the main characteristics of GaP dynistors obtained by this method and intended for operation in a high-temperature (up to 400°C) medium are presented. A characteristic feature of the obtained initial epitaxial n-p-n-p structure is the binary zinc-magnesium doping of the p-emitter layer, which improves the device switching parameters (in particular, reduces the residual voltage at an acceptable level of reverse current) in comparison to those of the traditional Mg-doped structures. The observed optimization of the current-voltage characteristic is related to differences in the mechanisms of Zn and Mg diffusion in the GaP lattice, which can lead under certain conditions to suppression of the effect of structural defects present in the epilayers.