VLSI的计算机模拟模型研究

本文回顾了器件模型的发展历程，分析了在电路模拟中广泛使用的SPICE Leve13模型的器件输入、输出、衬偏、亚阈值等特性，指出该模型在模拟小尺寸器件时的不足之处，详细分析了影响MOS器件特性的主要小尺寸效应：自顾不暇 、窄沟道效应、非均匀掺杂效应、迁移率衰减效应、速度饱和效应、漏感应势垒降低效应、热电子效应、亚阈值电导等物理机理以及对器件性能的影响，分析了建立在上述多种效应基础之上的小尺寸器件的BSIM模型的机理（Berkley Short Channel IGFET Model）。

Research on Computer Simulation Model of VLSI

The development process of device model is reviewed at first. Some devices' characters of input、output、substrate bias、subthreshold of SPICE Leve13 models that are widely used in circuit design presently are evaluated. There are obvious shortages while this model applied for small dimension MOS devices. The major effects influencing on MOS devices' characters are anlysised. These effects include:short channel、narrow channel non-uniform doping; electronic migration degradation; velocity saturation; drain induced barrier lower; hot carrier and subthreshold conductivity characters. The mechanism of an advanced device model BSIM3 (Berkley Short-Channel IGFET Model)which is based on above mentioned effects is analysed.