Dielectric Properties of Ultrathin CaF2 Ionic Crystals

Mechanically exfoliated 2D hexagonal boron nitride (h-BN) is currently the preferred dielectric material to interact with graphene and 2D transition metal dichalcogenides in nanoelectronic devices, as they form a clean van der Waals interface. However, h-BN has a low dielectric constant (≈3.9), which in ultrascaled devices results in high leakage current and premature dielectric breakdown. Furthermore, the synthesis of h-BN using scalable methods, such as chemical vapor deposition, requires very high temperatures (>900 °C) , and the resulting h-BN stacks contain abundant few-atoms-wide amorphous regions that decrease its homogeneity and dielectric strength. Here it is shown that ultrathin calcium fluoride (CaF₂) ionic crystals could be an excellent solution to mitigate these problems. By applying >3000 ramped voltage stresses and several current maps at different locations of the samples via conductive atomic force microscopy, it is statistically demonstrated that ultrathin CaF₂ shows much better dielectric performance (i.e., homogeneity, leakage current, and dielectric strength) than SiO₂, TiO₂, and h-BN. The main reason behind this behavior is that the cubic crystalline structure of CaF₂ is continuous and free of defects over large regions, which prevents the formation of electrically weak spots.