Growth and characterization of undoped and N-type (Te) doped MOVPE grown gallium antimonide |
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| Authors: | Pascal F Delannoy F Bougnot J Gouskov L Bougnot G Grosse P Kaoukab J |
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| Affiliation: | (1) Laboratoire associé au C.N.R.S., U.A. 391, Centre d’Electronique de Montpellier Université des Sciences et Techniques du Languedoc, Place Eugène Bataillon, 34060 Montpellier cedex, France |
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| Abstract: | The growth of GaSb by MOVPE and itsn-type doping using a dimethyltellurium dopant source are investigated. The results of growth rate, morphology and Te incorporation
as a function of growth parameters are given. Increasing growth temperature and V/III reactant ratio were found to reduce
the Te incorporation. The lowest Hall carrier concentrations obtained at room-temperature, onp-type andn-type MOVPE GaSb are respectively:p
H= 2.2 × 1016cm−3 with a Hall mobility ofμ
H= 860 cm2/V.s andn
H= 8.5 × 1015cm−3 withμ
H= 3860 cm2/V.s. Furthermore, Hall mobilities as high as 5000 cm2/V.s were measured onn-type GaSb samples. |
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| Keywords: | Metal-organic vapor phase epitaxy GaSb growth conditions free carriers |
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