Si-based receivers for optical data links |
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| Authors: | Jalali B. Naval L. Levi A.F.J. |
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| Affiliation: | Dept. of Electr. Eng., California Univ., Los Angeles, CA; |
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| Abstract: | ![]()
We present results for GexSi1-x waveguide pin detectors grown by rapid thermal chemical vapor deposition (RTCVD). Detectors with multiple Ge0.29Si0.71 absorption layers show an internal quantum efficiency of 33% at λ=1.3 μm with a dark current of 27 pA/μm2. The external quantum efficiency is limited to 7% by the fiber-to-waveguide coupling efficiency. The output eye diagram for a hybrid λ=1.3 μm silicon receiver at 500 Mb/s is demonstrated. Prospects of a silicon-based optoelectronic receiver array technology are discussed |
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