半导体纳米晶光电性能的研究进展

综述了近年来国内外纳米晶体光电子性质研究领域某些方面的进展情况,着重介绍了半导体纳米晶在光吸收、光致发光、非线性光学效应和电阻率等方面的独特性能。这些研究表明,对于0—3nm晶体(纳米晶粒处于分散介质中)来说,量子尺寸效应是产生晶体性质突变的主要原因之一。对纳米晶体结构和性能的深入研究,能为光电子材料的发展提供新的途径和思路。

Progress in Study on Opti-electronic Properties of Semi-conduct Nanocrystal

The progress of recent study on opto-electronic properties of semi- conduct nanocrystal was stated, especially emphasized on the optical-absorption, photoluminescence, nonlinear optical effects, electric conductivity and other distinctive properties of the semi-conduct nanocrystal. These studies show that the quantum size effect of the nanocrystal is one of the dominant factors that cause the sharp change of crystal opto- electronic properties. The further study of the structure and properties of the nanocrystal will be able to provide a new way for the development of the opto-electronic material.