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New system of self-assembled GaSb/GaP quantum dots
Authors:D. S. Abramkin  M. A. Putyato  A. K. Gutakovskii  B. R. Semyagin  V. V. Preobrazhenskii  T. S. Shamirzaev
Affiliation:1. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russia
Abstract:The atomic structure and energy spectrum of self-assembled GaSb/GaP quantum dots are discussed. It is shown that the quantum dots consist mainly of fully relaxed GaSb and have type-I band alignment with the ground electron state at the indirect valley of the GaSb conduction band.
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