New system of self-assembled GaSb/GaP quantum dots |
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Authors: | D. S. Abramkin M. A. Putyato A. K. Gutakovskii B. R. Semyagin V. V. Preobrazhenskii T. S. Shamirzaev |
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Affiliation: | 1. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russia
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Abstract: | The atomic structure and energy spectrum of self-assembled GaSb/GaP quantum dots are discussed. It is shown that the quantum dots consist mainly of fully relaxed GaSb and have type-I band alignment with the ground electron state at the indirect valley of the GaSb conduction band. |
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