Channelled-substrate narrow-stripe GaAs/GaAlAs injection lasers with extremely low threshold currents |
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| Authors: | Kirkby P.A. |
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| Affiliation: | Standard Telecommunication Laboratories Ltd., Harlow, UK; |
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| Abstract: | ![]()
Channelled-substrate GaAs/GaAlAs injection lasers with very narrow current-confining stripe contacts are described. They have threshold currents less than half those previously reported for this type of device. The best devices had a room-temperature threshold current of only 12 mA pulsed and 14 mA c.w. The lasers also have very good high-temperature performance and c.w. operation has been obtained up to 160°C. |
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