Crystallographic Orientation Dependence on Electrical Properties of (Bi,Na)TiO3‐based Thin Films |
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Authors: | Rui Ding Danyang Wang Dewei Chu Sean Li |
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Affiliation: | School of Materials Science and Engineering, The University of New South Wales, , Sydney, NSW 2052 Australia |
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Abstract: | Orientation‐engineered (La, Ce) cosubstituted 0.94(Bi0.5Na0.5)TiO3–0.06BaTiO3 thin films were epitaxially deposited on CaRuO3 buffered (LaAlO3)0.3(Sr2AlTaO6)0.35 single‐crystal substrates by pulsed laser deposition. The ferroelectric, piezoelectric, dielectric, and leakage current characteristics of the thin films were significantly affected by the crystallographic orientation. We found that the (001)‐oriented film exhibited the best ferroelectric properties with remnant polarization Pr = 29.5 μC/cm2 and coercive field Ec = 7.4 kV/mm, whereas the (111)‐oriented film demonstrated the largest piezoelectric response and dielectric permittivity. The bipolar resistive switching behavior, which is predominantly attributed to a combined effect of ferroelectric switching and formation/rupture of conductive filaments, was observed. The conduction mechanisms were determined to be ohmic conduction and Poole–Frenkel emission at high‐ and low‐resistance states, respectively, in all the films. |
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