Circuit model for the GaAs m.e.s.f.e.t. valid to 12 GHz |
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Authors: | Vendelin GD Omori M |
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Affiliation: | Varin Associates, Palo Alto, USA; |
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Abstract: | A new equivalent circuit is given for the GaAs m.e.s.f.e.t., which includes resistive loss in the feed back elements. The circuit values are given for several 1 ?m-gate GaAs m.e.s.f.e.t.s. A method for fitting s12 to the measured data is described. Finally, the gain and stability factor of several GaAs m.e.s.f.e.t.s. are extrapolated to 24 GHz from the present model. |
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