Acceptor and donor doping of AlxGa1−xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy |
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| Authors: | M. D. Bremser W. G. Perry O. H. Nam D. P. Griffis R. Loesing D. A. Ricks R. F. Davis |
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| Affiliation: | (1) Department of Materials Science and Engineering, North Carolina State University, Box 7907, 27695-7907 Raleigh, NC;(2) Analytical Instrumentation Facility, North Carolina State University, Box 7531, 27695-7531 Raleigh, NC |
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| Abstract: | Thin films of Si-doped AlxGa1−xN (0.03≤x≤0.58) having smooth surfaces and strong near-band edge cathodoluminescence were deposited at 0.35–0.5 μm/h on on-axis
6H-SiC(0001) substrates at 1100°C using a 0.1 μm AlN buffer layer for electrical isolation. Alloy films having the compositions
of Al0.08Ga0.92N and Al0.48Ga0.52N exhibited mobilities of 110 and 14 cm2/V·s at carrier concentrations of 9.6×1018 and 5.0×1017 cm−3, respectively. This marked change was due primarily to charge scattering as a result of the increasing Al concentration in
these random alloys. Comparably doped GaN films grown under similar conditions had mobilities between 170 and ∼350 cm2/V·s. Acceptor doping of AlxGa1−xN for x≤0.13 was achieved for films deposited at 1100°C. No correlation between the O concentration and p-type electrical
behavior was observed. |
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| Keywords: | 6H-SiC(0001) acceptor doping AlxGa1− xN GaN charge scattering donor doping electron mobility |
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