Planar, ion implanted, high voltage 6H-SiC P-N junction diodes |
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Authors: | Shenoy PM Baliga BJ |
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Affiliation: | Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC; |
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Abstract: | Planar, high voltage (800 V) P-N junction diodes have been fabricated for the first time on N-type 6H-SiC by room temperature boron implantation through a pad oxide deposited within windows etched in an LPCVD field oxide. All the diodes showed excellent rectification with leakage currents of less than 10 nA (~5×10-5 A/cm2 ) until avalanche breakdown. It was found that the breakdown voltage increases with junction depth. The reverse recovery time (trr) was measured to be 50 ns for the 800 V diode from which an effective minority carrier life time of 12.5 ns was extracted |
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