| 核化密度对硅上生长异质外延金刚石膜的影响 |
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| 引用本文： | 廖克俊 王万录. 核化密度对硅上生长异质外延金刚石膜的影响[J]. 微细加工技术, 1997, 0(4): 37-42 |
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| 作者姓名： | 廖克俊 王万录 |
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| 作者单位： | 重庆大学应用物理系!重庆，630044，重庆大学应用物理系!重庆，630044 |
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| 摘 要： | 本文利用扫描电子显微镜及Raman谱等研究了Si（100）上异质外延金刚石膜的生长．金刚石膜是由微波等离子体CVD法制备的。实验结果表明核化密度对Si（100）上异质外延金刚石膜生长有重要的影响．过低或过高的核化密度都不可能形成异质外延金刚石膜。
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| 关 键 词： | 异质外延金刚石膜 核化密度 微波等离子体CVD |
EFFECT OF NUCLEATION DENSITY ON HETEROEPITAXIAL DIAMOND FILMS GROWTH ON Si (100) |
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| Liao Kejun, Wang Wanlu. EFFECT OF NUCLEATION DENSITY ON HETEROEPITAXIAL DIAMOND FILMS GROWTH ON Si (100)[J]. Microfabrication Technology, 1997, 0(4): 37-42 |
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| Authors: | Liao Kejun Wang Wanlu |
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| Abstract: | In this paper, heteroepitaxial diamond films growth on Si(100) was Investigated by SEM and Raman specera. The diamond films were grown by microwave plasma CVD. The experimental results showed that the nucleation density has an important effect on the growth of the heteroepitaxial diamond films on Si (100). The heteroepitaxial diamond films can not be formed on Si (100) under lower and higher nucleation density. |
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| Keywords: | heteroepitaxial diamond films nucleation density microwave plasma CVD |
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