Roton growth resistance of helium-4 solid surfaces

Experimental data available on roton contribution to the growth resistance of helium-4 surfaces from the work of Amrit, Legros and Poitrenaud (ref. 4) are analysed using the quantum kind model of Edwards, Mukherjee and Pettersen (ref. 5). The results are in strong favour of dissipation being due to kink-roton interactions. Further, they also support the idea that the angular anisotropy of the roton growth resistance of rough crystral surfaces is related to the density of steps.