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Hot-wire chemical vapor deposition of high hydrogen content silicon nitride for solar cell passivation and anti-reflection coating applications |
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| Authors: | J. K. Holt D. G. Goodwin A. M. Gabor F. Jiang M. Stavola Harry A. Atwater |
| Affiliation: | a Department of Applied Physics, California Institute of Technology, Pasadena, CA 91125, USA b Evergreen Solar, Inc., 259 Cedar Hill Street, Marlboro, MA 01752, USA c Department of Physics, Lehigh University, Bethlehem, PA 18015, USA d Division of Engineering and Applied Sciences, Pierce Hall, 29 Oxford Street, Cambridge, MA 02138, USA |
| Abstract: | The stoichiometry and hydrogen content of hot-wire (HW)-grown silicon nitride was examined as a function of SiH4/NH3 flow ratio. The effect of post-deposition hydrogenation treatment on overall film hydrogen content was determined. The hydrogen release properties in Si-rich and N-rich nitride layers were characterized by annealing treatments. Defect hydrogenation was studied using Fourier transform infrared spectroscopy on platinum-diffused silicon substrates. HW nitride layers were deposited onto diffused emitter String Ribbon silicon substrates, producing cells with comparable short circuit current density, open circuit voltage, fill-factor, and efficiency to those fabricated using plasma chemical vapor deposition nitride layers. |
| Keywords: | Hot-wire chemical vapor deposition Silicon nitride FTIR Defect hydrogenation |
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