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Continuously tunable 1.55-/spl mu/m VCSEL implemented by precisely curved dielectric top DBR involving tailored stress
Authors:A. Tarraf F. Riemenschneider M. Strassner J. Daleiden S. Irmer H. Halbritter H. Hillmer P. Meissner
Affiliation:Inst. of Microstructure Technol. & Anal.s, Univ. of Kassel, Germany;
Abstract:
We present an optically pumped and continuously tunable 1.55-/spl mu/m vertical-cavity surface-emitting laser (VCSEL). The device shows 26-nm spectral tuning range, 400-/spl mu/W maximum output power, and 57-dBm side-mode suppression ratio. The VCSEL is implemented using a two-chip concept. The movable top mirror membrane is precisely designed to obtain a tailored air-gap length (L'=16 /spl mu/m) and a radius of curvature (ROC=4.5mm) in order to efficiently support the fundamental optical mode of the plane-concave resonator. It consists of a distributed Bragg reflector (DBR) with periodic, differently stressed silicon nitride and silicon dioxide multilayers implemented by plasma-enhanced chemical vapor deposition. The lower InP-based part, comprising the InP-InGaAsP bottom DBR and the active region, is grown monolithically using metal-organic vapor phase epitaxy.
Keywords:
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