首页 | 本学科首页   官方微博 | 高级检索  
     

使用Gibbs最小能法分析三氯氢硅的还原过程
引用本文:司文学,汤传斌. 使用Gibbs最小能法分析三氯氢硅的还原过程[J]. 有色冶金节能, 2020, 0(1): 25-30
作者姓名:司文学  汤传斌
作者单位:中国恩菲工程技术有限公司
摘    要:基于目前西门子法多晶硅生产过程中三氯氢硅的还原过程的研究,介绍了Gibbs最小能法的模型方程的建立和求解过程;并通过模拟计算结果与生产统计数据的对比,证明了所建模型的正确性.同时,利用Gibbs最小能法分析了原料中四氯化硅、三氯氢硅、二氯二氢硅、氯化氢的含量以及反应温度对还原产物中各种物质含量的影响,为相关的工程技术人...

关 键 词:多晶硅  Gibbs最小能法  三氯氢硅  还原过程

Analysis of the Reduction Process of Trichlorosilane by Gibbs Free Energy Minimization
SI Wen-xue,TANG Chuan-bin. Analysis of the Reduction Process of Trichlorosilane by Gibbs Free Energy Minimization[J]. Energy Saving Of Non-Ferrous Metallurgy, 2020, 0(1): 25-30
Authors:SI Wen-xue  TANG Chuan-bin
Abstract:Based on the current research on the reduction process of trichlorosilane in the polysilicon production process by Siemens,the establishment and solution of the model equation of the Gibbs free energy minimization were introduced,and the correctness of the model was proved by comparing the simulation results with the operation data.In addition,the Gibbs free energy minimization was used to analyze the effects of contents of STC,TCS,DCS and HCl in raw materials and the reaction temperature on the contents of the reduction product,with providing design basis for relevant engineers and researchers.
Keywords:polysilicon  Gibbs free energy minimization  trichlorosilane  reduction process
本文献已被 CNKI 维普 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号