Determination of the matrix element of the quasi-momentum operator in the zero-gap semiconductor HgSe by the field-effect method in electrolyte |
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| Authors: | O. Yu. Shevchenko V. F. Radantsev A. M. Yafyasov V. B. Bozhevol’nov I. M. Ivankiv A. D. Perepelkin |
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| Affiliation: | (1) Institute of Physics, St. Petersburg State University, ul. Ul’yanovskaya 1, Petrodvorets, 199164, Russia;(2) Ural State University, pr. Lenina 51, Yekaterinburg, 620083, Russia |
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| Abstract: | The field-effect method in electrolyte was used to study the zero-gap semiconductor HgSe-electrolyte (saturated solution of KCl) system by measuring the capacitance-voltage and current-voltage characteristics. A technique for the estimation of the matrix element P of the quasi-momentum operator from capacitance-voltage characteristics was proposed, and the value of P for HgSe was determined at T=295 K. |
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