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Reduction of damping in high-speed semiconductor lasers
Authors:Wang   G. Nagarajan   R. Tauber   D. Bowers   J.
Affiliation:Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA;
Abstract:
An analytical expression for the intrinsic gain suppression factor based on carrier heating is derived. The theory shows good agreement with the published experimental value of ∈=+1.5×10-17 cm3 for in-plane lasers. For the first time, a negative gain suppression factor for particular laser designs is predicted and experimentally observed. A negative gain suppression factor can lead to the elimination of damping in semiconductor lasers. Using vertical-cavity surface-emitting lasers, a negative gain suppression factor of -2.2×10-17 cm3 is observed
Keywords:
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