| 基于噪声消除技术的超宽带CMOS低噪声放大器设计 |
| |
| 引用本文： | 马翔,金德鹏,苏历,曾烈光. 基于噪声消除技术的超宽带CMOS低噪声放大器设计[J]. 传感器与微系统, 2011, 30(11) |
| |
| 作者姓名： | 马翔 金德鹏 苏历 曾烈光 |
| |
| 作者单位： | 清华大学电子工程系,北京,100084 |
| |
| 基金项目： | 国家高科技研究发展计划资助项目(2009AA011205); 国家自然科学基金资助项目(60928001;60972019); 国家重大科技专项(2009ZX03006-007-02;2010ZX03004-002-02) |
| |
| 摘 要： | 为满足3.5 GHz单载波超宽带无线接收机的射频需求,设计了一种工作在3～4 GHz的超宽带低噪声放大器。电路采用差分输入的CMOS共栅级结构,利用MOS管跨导实现宽带输入匹配,利用电容交叉耦合结构和噪声消除技术降低噪声系数,同时提高电压增益。分析了该电路的设计原理和噪声系数,并在基于SMIC 0.18μm CMOS射频工艺进行了设计仿真。仿真结果表明:在3～4GHz频段内,S11和S22均小于-10 dB,S21大于14dB,带内起伏小于0.5dB,噪声系数小于3dB;1.8V电源电压下,静态功耗7.8mW。满足超宽带无线接收机技术指标。
|
| 关 键 词： | 超宽带 低噪声放大器 噪声消除 电容交叉耦合 |
Design of ultra-wideband CMOS low noise amplifier based on noise cancelling technology |
| |
| MA Xiang,JIN De-peng,SU Li,ZENG Lie-guang. Design of ultra-wideband CMOS low noise amplifier based on noise cancelling technology[J]. Transducer and Microsystem Technology, 2011, 30(11) |
| |
| Authors: | MA Xiang JIN De-peng SU Li ZENG Lie-guang |
| |
| Affiliation: | MA Xiang,JIN De-peng,SU Li,ZENG Lie-guang(Department of Electronic Engineering,Tsinghua University,Beijing 100084,China) |
| |
| Abstract: | In order to satisfy the demands of wireless receiver of 3.5 GHz sole-carrier UWB communication system,an ultra-wideband 3 ～4 GHz low noise amplifier is presented.The circuit is implemented in CMOS common-gate differential structure,using capacitor cross-coupling structure and noise canceling technology to reduce the noise coefficient and boost its voltage gain.The design principle of the circuit as well as noise coefficient are analyzed.Design simulation in SMIC 0.18 μm CMOS RF processis carried out S21 is more than 14 dB power gain and noise coefficient is less than 3 dB,with S11 and S22 less than-10 dB,while consuming 7.8 mW power under 1.8V supply,which meets the requirements of UWB communication system. |
| |
| Keywords: | ultra-wideband(UWB) low noise amplifier noise cancelling capacitor cross-coupling |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
