Low threshold current operation of vapour-grown 650 nm-band InGaAsP/InGaP DH lasers |
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| Authors: | Usui A. Matsumoto T. Inai M. Mito I. Kobayashi K. Watanbe H. |
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| Affiliation: | NEC Corporation, Fundamental Research Laboratories, Kawasaki, Japan; |
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| Abstract: | ![]()
InGaAsP/InGaP double heterojunction lasers emitting in the 650 nm band have been fabricated on GaAs0.61P0.39 substrates by hydride vapour-phase epitaxy. By optimising growth conditions and device structure, a threshold current density as low as 5.6 kA/cm2 is obtained, and CW operation is achieved up to ?27° C. |
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