SIMS quantification of As and In in Hg1−xCdxTe materials of different x values |
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Authors: | Larry Wang Lily H Zhang |
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Affiliation: | (1) Charles Evans & Associates, 301 Chesapeake Dr., 94063 Redwood City, CA |
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Abstract: | This paper presents a study of Secondary Ion Mass Spectrometry (SIMS) quantification of As and In in Hg1–xCdxTe materials. The SIMS results show that for Hg1-xCdxTe with x from 0.2 to 0.8, As and In quantification is independent of the x-values (0.2–0.8). The relative sensitivity factors
(RSF) for In and As derived from the standard of one x value can be used to accurately quantify unknown samples of different
x value(s). We also determined the dependence of sputtering rate vs. x values under oxygen beam bombardment. |
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Keywords: | SIMS Hg1− xCdxTe In As characterization dopant RSF |
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