| 正交实验法优化六方氮化硼薄膜的制备工艺 |
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| 引用本文： | 李展.正交实验法优化六方氮化硼薄膜的制备工艺[J].光电子．激光,2010(8):1206-1209. |
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| 作者姓名： | 李展 |
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| 作者单位： | 天津理工大学天津市薄膜电子与通信器件重点实验室; |
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| 基金项目： | 国家自然科学基金资助项目(50972105); 天津市自然基金重点资助项目(09JCZDJC16500) |
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| 摘 要： | 采用射频磁控溅射法,在Si(100)衬底上制备了适用于声表面波(SAW)器件的氮化硼(BN)薄膜。通过正交实验法,以薄膜中六方相的纯度和取向为指标,优化了磁控溅射方法制备六方BN(h-BN)薄膜的工艺条件。利用傅里叶变换红外光(FTIR)谱和X射线衍射(XRD)谱对薄膜进行了表征,实验结果表明,溅射功率为300W、无衬底负偏压、温度为400℃和N2∶Ar=7∶8vol.%时可以制备出高纯度且高c-轴择优取向的h-BN。
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| 关 键 词： | 氮化硼(BN)薄膜 正交实验 傅里叶交换红外光(FTIR)谱 X射线衍射(XRD) |
Optimized fabrication technology of h-BN films by orthogonalexperiment |
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| LI Zhan.Optimized fabrication technology of h-BN films by orthogonalexperiment[J].Journal of Optoelectronics·laser,2010(8):1206-1209. |
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| Authors: | LI Zhan |
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| Affiliation: | LI Zhan,YANG Bao-he(Tianjin Key Laboratory of Film Electronic and Communication Devices,Tianjin University of Technology,Tianjin 300384,China) |
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| Abstract: | Boron nitride films for SAW devices were deposited on Si(100)wafers by RF magnetron sputtering.The purity and orientation of h-BN in the films was investigated by fourier transform infrared(FTIR)spectroscopy and X-ray diffraction(XRD)spectra.To optimize the RF magnetron sputtering technology,an orthogonal experiment design was used with sputtering time fixed at 2 h,distance from target to substrate of 6 cm,and the working pressure of 0.75 Pa.FTIR spectroscopy and XRD spectra show that high purity and c-axis... |
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| Keywords: | BN Films orthogonal experiment FTIR spectra XRD |
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