Heteroepitaxy of In0.53Ga0.47As on GaAs substrate by low pressure metalorganic chemical vapor deposition for the OEIC applications |
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| Authors: | Aiguang Ren Xiaomin Ren Qi Wang Deping Xiong Hui Huang Yongqing Huang |
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| Affiliation: | Key Laboratory of Optical Communication and Lightwave Technologies, Ministry of Education,Beijing University of Posts and Telecommunications, Beijing 100876, China |
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| Abstract: | InP/In0.53Ga0.47As/InP sandwich structure grown by low pressure metalorganic chemical vapor deposition has been investigated, in order to assess the different heteroepitaxy schemes which are based on low temperature (LT) InP metamorphic buffer layer. Photoluminescence (PL) and high resolution X-ray diffraction (HRXRD) and scan probe microscope (SPM) have been carried out to characterize the heteroepitaxy samples. For the best optimum growth condition of 15 nm-thick LT InP buffer at the growth temperature of 450 °C, the full width at half maximum (FWHM) values of the HRXRD, the room-temperature PL were 512 arcsec and 51.7 meV, respectively and the root mean square of SPM is only 0.915 nm. |
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| Keywords: | Mismatch LP-MOCVD Heteroepitaxy Scan probe microscope |
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