High-resistivity Zr resistors with Ti barrier layer for NbJosephson circuits

Zr resistors are applied to Josephson integrated circuits in place of Mo because a Zr thin film has about five times the resistivity of Mo. Zr resistors do not need to be protected during etching, unlike conventional Mo resistors, because Zr has much smaller etching rate than Nb. Zr resistors occupy only 25% of a unit cell area. Using Zr resistors reduces the area of the Josephson gate and allows increased circuit integration. Increased contact resistance between Zr and Nb films after annealing at about 350°C was found but suppressed with a Ti barrier. Resistors with a resistance variation throughout a wafer of within ±2.8% were fabricated