| 新型MSIS结构气敏电容的研究 |
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| 引用本文： | 田敬民.新型MSIS结构气敏电容的研究[J].固体电子学研究与进展,1996,16(3):284-288. |
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| 作者姓名： | 田敬民 |
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| 作者单位： | 西安理工大学，微电子技术教研室 |
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| 摘 要： | 采用静电喷雾高温分解工艺制备ＳｎＯ２气敏膜，并与Ｓｉ３Ｎ４－ＳｉＯ２集成多层介质膜，用催化金属Ｐｔ作栅电极，制成新型的ＭＳＩＳ结构气敏电容。通过检测平带电压的变化，研究对Ｈ２和Ｏ２的气敏特性，分析其气敏机理并提出了检测的物理模型．
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| 关 键 词： | 二氧化锡，气敏电容，金属－氧化物半导体－绝缘层－硅结构 |
Study on a Novel MSIS Gas Sensing Capacitor |
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| Tian Jingmin.Study on a Novel MSIS Gas Sensing Capacitor[J].Research & Progress of Solid State Electronics,1996,16(3):284-288. |
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| Authors: | Tian Jingmin |
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| Abstract: | Catalytic metal Pt and SnO2 film deposited by using electrostatic spray pyrolysis process were integreted in a Pt-SnO2-Si3N4-SiO2-Si MSIS capacitor.The sensing characteristics of the devices for H2 and O2 as a function of the gas concentration and temperature were researched by detection of flantband voltage of the MSIS. Based on adsorption reaction of oxygen ions at Pt-SnO2 interface,a model is proposed for hydrogen and oxygen detection. |
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| Keywords: | Tin Oxide Gas Sensing Capacitior MSIS Structure |
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